# 面向 Micro-LEDs 的烧蚀驱动选择性激光直接巨量转移：高速、增强间隙容忍度与高精度

> 原文链接：https://robotics.hellobike.com/papers/2026-10-15-2610-21839
> 频道：papers | 更新日期：2026-10-15 | 标签：arxiv, cs.RO
> 核心摘要：针对 Micro-LEDs 巨量转移瓶颈，提出 D-DLAT 以烧蚀冲击主动推进芯片，并在不同尺寸转移、图案化和阵列重排中验证。

# 面向 Micro-LEDs 的烧蚀驱动选择性激光直接巨量转移：高速、增强间隙容忍度与高精度

::: v-pre
> 原文链接：[Ablation-Driven Selective Laser Direct Mass Transfer for Micro-LEDs with High Speed, Enhanced Gap Tolerance, and High Precision](https://arxiv.org/abs/2610.21839)（arXiv 2610.21839 · 发布日期：2026-10-15）

**Ablation-Driven Selective Laser Direct Mass Transfer for Micro-LEDs with High Speed, Enhanced Gap Tolerance, and High Precision**

针对 Micro-LEDs 巨量转移瓶颈，提出 D-DLAT 以烧蚀冲击主动推进芯片，并在不同尺寸转移、图案化和阵列重排中验证。

## 核心要点

- 现有 LIFT 方法受低吞吐、有限选择性和长反应时间限制。
- D-DLAT 以聚酰亚胺为动态释放层，通过直接烧蚀主动推动芯片。
- 优化烧蚀轮廓和扫描路径后，实现高速转移并提升精度与鲁棒性。
- 实现 600 μm 至 35 μm 芯片转移，支持复杂图案化转移和阵列重排。

**验证范围与局限**：验证范围为摘要所述 600 μm 至 35 μm 的 Micro-LEDs 转移、复杂图案化转移和阵列重排操作。

## 英文摘要 (Abstract)

Micro light-emitting diodes (micro-LEDs) offer superior performance for next-generation displays, yet their scalable manufacturing is severely bottlenecked by the mass transfer process from donor to receiver substrates. The existing laser-induced forward transfer (LIFT) methods are restricted by low throughput, limited selectivity, and long reaction times. In this study, we introduce a novel defocused direct laser ablation transfer (D-DLAT) method utilizing polyimide as a dynamic release layer. Whereas most indirect laser transfer methods trigger chip release followed by passive descent toward the receiver, D-DLAT directly ablates the release layer to actively propel the small-sized chips towards the receiver via ablation shock. By optimizing the ablation profiles and scanning paths, this method achieves high-speed transfer with significantly enhanced precision and robustness. We demonstrate the successful transfer of micro-LEDs ranging from 600 $\unicode{x03BC}$m down to 35 $\unicode{x03BC}$m in size, with a minimum reported placement error of less than 1 $\unicode{x03BC}$m, and a critical transfer gap of up to 50 $\unicode{x03BC}$m. Furthermore, the D-DLAT approach enables full selectivity, facilitating complex patterned transfers and array repitching operations that are essential for full-color display integration. Our findings indicate that D-DLAT effectively overcomes the fundamental limitations of current transfer technologies, demonstrating substantial potential for the scalable and high-yield manufacturing of advanced micro-LED displays. Ultimately, D-DLAT establishes a robust paradigm for the high-speed manipulation and heterogeneous integration of micro-optoelectronic devices, extending its profound implications beyond displays to the broader landscape of advanced micro-assembly and flexible electronics.

作者：曹宇轩 Cao Yuxuan, Yulong Wang, Jürgen Brugger, Zhen Zhang
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## 原始参考来源 (Sources)

- [arXiv 2610.21839：Ablation-Driven Selective Laser Direct Mass Transfer for Micro-LEDs with High Speed, Enhanced Gap Tolerance, and High Precision](https://arxiv.org/abs/2610.21839)